High breakdown voltage transistor and method
US6724066B2 · kind B2 · utility
10Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2002 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Feb 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
An integrated circuit that includes a high breakdown voltage bipolar transistor. The bipolar transistor includes an emitter 36, a base 32, and a collector structure. The emitter 36 is adjacent to and overlies the base 32 and the base 32 is adjacent to and overlies a core portion 48 of the collector structure. The collector structure includes, in addition to the core portion 48, a collector contact region 31 and a lateral collector region 50 between the core portion 48 and the collector contact region 31. The lateral collector region 50 is thinner than said collector contact region at some point along its length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.