Opto-electronic device integration
US6724794B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Aug 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of integrating a chip with a topside active optical chip is described. The topside active optical chip has at least one optical laser device, having an active side including an optically active region, a laser cavity having a height, an optically inactive region, a bonding side opposite the active side, and a device thickness. The method involves bonding the optical chip to the electronic chip; applying a substrate to the active side, the substrate having a substrate thickness over the active region in the range of between a first amount and a second amount, and applying an anti-reflection without a special patterning or distinguishing between the at least one optical laser device and any other device. A hybrid electro-optical chip is also described as having an electronic chip; and a topside active optical chip. The hybrid electro-optical chip having been created by one of the methods herein. A module is also described. The module has an optical chip having at least one topside active laser and at least one photodetector, the at least one topside active laser having opposed mirrors defining an active region therebetween, an electronic chip bonded to the optical chip, and …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.