Method of making a functional device with deposited layers subject to high temperature anneal
US6724967B2 · kind B2 · utility
2Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2001 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Jul 27, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/976
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is disclosed for making a device having one or more deposited layers and subject to a post deposition high temperature anneal. Opposing films having similar mechanical properties are deposited on the front and back faces of a wafer, which is subsequently subjected a high temperature anneal. The opposing films tend to cancel out stress-induced warping of the wafer during the subsequent anneal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.