Integrated circuit resistors in a high performance CMOS process
US6727133B1 · kind B1 · utility
5Cited by
1References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 21, 2002 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Nov 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit resistor (150) is formed on an isolation dielectric structure (20) formed in a semiconductor (10). A patterned silicon nitride layer (74) is formed on the surface of the resistor polysilicon layer (40) that functions to mask the surface of the integrated circuit resistor (150) during the formation of metal silicide regions (140) on the integrated circuit resistor (150).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.