Fabrication of metal contacts for deep-submicron technologies
US6727165B1 · kind B1 · utility
2Cited by
8References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2001 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Dec 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a process for forming a semiconductor device having salicided contacts. A concentration of metal is formed at the substrate surface by exposing the substrate to a metal plasma. The concentration of metal is then annealed to produce a salicided contact. In a separate embodiment, the metallization plasma and salicide anneal occur in-situ in one process step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.