Method of making an aligned electrode on a semiconductor structure
US6727167B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 12, 2001 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Oct 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a transparent electrode for a light-emitting diode includes depositing metal on a top surface of a semiconductor structure, and defining a first region of the semiconductor structure for a first electrode by forming a mask over the metal, the mask having at least one opening so that the first region is covered by the mask and a second region is aligned with the at least one opening in the mask. The method also includes removing metal aligned with the at least one opening in the mask in the second region to form the first electrode overlying the first region of the semiconductor structure and so as to reveal the top surface of the semiconductor structure in the second region. After forming the first electrode during the removing metal step, material is removed from the semiconductor structure aligned with the at least one opening in the second region to form a second electrode surface for a second electrode, the second electrode surface being lower in elevation than the top surface of the semicondcutor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.