Mark Gottfried
9Patents
6h-index
15Co-inventors
56Inventor score
Filing activity: Oct 23, 1998 → Oct 10, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6413839B1 | Semiconductor device separation using a patterned laser projection | Emerging Cross-Sectional Technologies | 58 | Expired |
| US6902990B2 | Semiconductor device separation using a patterned laser projection | Emerging Cross-Sectional Technologies | 49 | Expired |
| US6849524B2 | Semiconductor wafer protection and cleaning for device separation using laser ablation | Emerging Cross-Sectional Technologies | 33 | Expired |
| US7863172B2 | Gallium nitride semiconductor device | Electricity | 22 | Active |
| US7078319B2 | Laser separated die with tapered sidewalls for improved light extraction | Emerging Cross-Sectional Technologies | 9 | Expired |
| US7439599B2 | PIN photodiode structure and fabrication process for reducing dielectric delamination | Electricity | 7 | Expired |
| US6946313B2 | Method of making an aligned electrode on a semiconductor structure | Electricity | 4 | Expired |
| US7436039B2 | Gallium nitride semiconductor device | Electricity | 4 | Expired |
| US6727167B2 | Method of making an aligned electrode on a semiconductor structure | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.