Forming ferroelectric Pb(Zr,Ti)O3 films
US6730354B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 8, 2001 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | Jan 16, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S427/101
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. The source reagent solution is vaporized to form a precursor vapor. The precursor vapor is introduced into a chemical vapor deposition chamber containing the substrate. In another aspect, before deposition, the substrate is preheated during a preheating period. After the preheating period, the substrate is disposed on a heated susceptor during a heating period, after which a PZT film is formed on the heated substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.