Patent · US Expired

Antireflective SiO-containing compositions for hardmask layer

US6730454B2 · kind B2 · utility

74Cited by
6References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 16, 2002
Grant dateMay 4, 2004
Priority date
Expiry dateMay 28, 2022

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S430/151
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.