Antireflective SiO-containing compositions for hardmask layer
US6730454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2002 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | May 28, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/151
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.