Arpan Mahorowala
42Patents
12h-index
84Co-inventors
84Inventor score
Filing activity: Jan 10, 2000 → Sep 21, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9824893B1 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 413 | Active |
| US6316167A | Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof | Electricity | 87 | Expired |
| US6730454B2 | Antireflective SiO-containing compositions for hardmask layer | Emerging Cross-Sectional Technologies | 74 | Expired |
| US6514667B2 | Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof | Electricity | 62 | Expired |
| US6649531B2 | Process for forming a damascene structure | Electricity | 60 | Expired |
| US6420084B1 | Mask-making using resist having SIO bond-containing polymer | Physics | 38 | Expired |
| US10074543B2 | High dry etch rate materials for semiconductor patterning applications | Electricity | 22 | Active |
| US11031245B2 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 16 | Active |
| US6869899B2 | Lateral-only photoresist trimming for sub-80 nm gate stack | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6869542B2 | Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials | Electricity | 15 | Expired |
| US11183383B2 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 13 | Active |
| US6780736B1 | Method for image reversal of implant resist using a single photolithography exposure and structures formed thereby | Electricity | 12 | Expired |
| US7030008B2 | Techniques for patterning features in semiconductor devices | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6903023B2 | In-situ plasma etch for TERA hard mask materials | Electricity | 8 | Expired |
| US7326442B2 | Antireflective composition and process of making a lithographic structure | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6849389B2 | Method to prevent pattern collapse in features etched in sulfur dioxide-containing plasmas | Physics | 7 | Expired |
| US11784047B2 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 7 | Active |
| US7223517B2 | Lithographic antireflective hardmask compositions and uses thereof | Physics | 7 | Expired |
| US7172969B2 | Method and system for etching a film stack | Electricity | 7 | Expired |
| US7175966B2 | Water and aqueous base soluble antireflective coating/hardmask materials | Physics | 5 | Expired |
| US7648820B2 | Antireflective hardmask and uses thereof | Emerging Cross-Sectional Technologies | 4 | Active |
| US7497959B2 | Methods and structures for protecting one area while processing another area on a chip | Physics | 4 | Expired |
| US7077903B2 | Etch selectivity enhancement for tunable etch resistant anti-reflective layer | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6682860B2 | Attenuated embedded phase shift photomask blanks | Chemistry; Metallurgy | 4 | Expired |
| US7172849B2 | Antireflective hardmask and uses thereof | Emerging Cross-Sectional Technologies | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.