Formation of planar strained layers

US6730551B2 · kind B2 · utility

Assignee

• Massachusetts Institute of Technology · US

Inventors

• Minjoo L. Lee · Cambridge, US
• Christopher Leitz · Nashua, US
• Eugene A. Fitzgerald · Windham, US

Key dates

• Filing date: Aug 2, 2002
• Grant date: May 4, 2004
• Expiry date: Aug 2, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. The compressively strained layer is substantially planar, having a surface roughness characterized in (i) having an average wavelength greater than an average wavelength of a carrier in the compressively strained layer or (ii) having an average height less than 10 nm.