Pre-ECD wet surface modification to improve wettability and reduced void defect
US6730597B1 · kind B1 · utility
7Cited by
10References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2000 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | Sep 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pre-ECD wet surface treatment. After forming the barrier material (110) and seed layer (112), the surface of the seed layer (112) is treated with a water-based solution to remove surface contamination (122) and improve wettability. The ECD copper film (124) is then formed over the seed layer (112).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.