Method for fabricating a barrier layer

US6730607B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Helmut Wurzer · Dresden, DE
• Martin Schrems · Langenbruck, DE
• Anke Krasemann · Dresden, DE
• Thomas Pompl · Barnstorf, DE

Key dates

• Filing date: Jun 15, 2001
• Grant date: May 4, 2004
• Expiry date: Jun 15, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02164
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of fabricating a barrier layer includes oxidizing a silicon-containing substrate to form a substrate oxide layer on the surface of the substrate, producing an oxygen-impervious layer at an interface between the substrate oxide layer and the substrate, and etching the substrate oxide layer until the underlying oxygen-impervious layer is uncovered.