Reduced dark current for CMOS image sensors
US6730899B1 · kind B1 · utility
32Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Jan 10, 2003 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | Jan 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/147
Abstract
A CMOS image sensor comprises a substrate of a first conductivity type, a photodetector for capturing incident light and converting it to a charge; a transfer gate for passing the charge from the photodetector; and a region of the first conductivity type of enhanced conductivity in the substrate which extends substantially along an entire length and width of the transfer gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.