Patent · US Expired

Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device

US6730943B2 · kind B2 · utility

14Cited by

2References

17Claims

0Family size

Assignee

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

Jean Massies · Paris, FR
Nicolas Grandjean · Nice, FR
Benjamin Damilano · Paris, FR

Key dates

Filing date	Oct 11, 2002
Grant date	May 4, 2004
Priority date	—
Expiry date	Oct 11, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/825
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colors which can be combined, particularly to obtain white light.Method for preparing this layer.Light emitting diode (LED), particularly a LED emitting white light comprising such a thin layer in its active zone, and lighting device comprising such a diode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.