Dual write cycle programmable conductor memory system and method of operation
US6731528B2 · kind B2 · utility
67Cited by
105References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2002 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | May 3, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method and apparatus for writing a programmable conductor random access memory (PCRAM) element. After a read operation of the memory element a complement logical state from that read is written back to the memory element. In one embodiment the memory element is then again written back to its original state. In another embodiment logic circuitry keeps track of whether the original logic state or its complement are stored in the memory element so that during the next read the stored logic will be correctly read.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.