Nonvolatile semiconductor memory device
US6731535B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2003 |
| Grant date | May 4, 2004 |
| Priority date | — |
| Expiry date | Jun 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device includes a silicon substrate, bit lines, word lines, and memory cells. The bit line is positioned above the main surface of the silicon substrate and the word line is provided to intersect the bit line. The memory cell is positioned at a region where the bit line and the word line intersect and has one end electrically connected to the bit line and the other end electrically connected to the word line. The memory cell includes a TMR element and an access diode electrically connected in series. The access diode includes an n-type silicon layer and a p-type silicon layer recrystallized by melting-recrystallization and has a pn junction at the interface between the n-type silicon layer and the p-type silicon layer. As a result, a nonvolatile semiconductor memory device reduced in size and having high performance can be manufactured inexpensively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.