Symmetrical mask system and method for laser irradiation
US6733931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | May 25, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method are provided for laser irradiating a semiconductor substrate using a multi-pattern mask. The method comprises: exposing a semiconductor substrate to laser light projected through a multi-pattern mask; advancing the mask and substrate in a first direction to sequentially expose adjacent areas of the substrate to each of the mask patterns in a first predetermined order; and, advancing the mask and substrate in a second direction, opposite the first direction, to sequentially expose adjacent areas of the substrate to each of the mask patterns in the first order. In one aspect, the method further comprises: forming a multi-pattern mask having a first plurality patterns aligned in the first order with respect to the first direction and a second plurality of patterns, corresponding to the first plurality of patterns, aligned in the first order with respect to the second direction. Alternately, the method comprises: forming a first multi-pattern mask having a first plurality patterns aligned in the first order with respect to the first direction; and, forming a second multi-pattern mask having a second plurality of patterns, corresponding to the first plurality of patt…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.