Mark Albert Crowder
60Patents
13h-index
18Co-inventors
81Inventor score
Filing activity: Sep 3, 1999 → Jan 25, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6555449B1 | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication | Electricity | 87 | Expired |
| US6573531B1 | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures | Electricity | 75 | Expired |
| US6635554B1 | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures | Electricity | 73 | Expired |
| US6830993B1 | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method | Emerging Cross-Sectional Technologies | 59 | Expired |
| US7192479B2 | Laser annealing mask and method for smoothing an annealed surface | Chemistry; Metallurgy | 35 | Expired |
| US7029996B2 | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification | Electricity | 32 | Expired |
| US8648328B2 | Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces | Electricity | 31 | Active |
| US6767804B2 | 2N mask design and method of sequential lateral solidification | Emerging Cross-Sectional Technologies | 31 | Expired |
| US8685774B2 | Method for fabricating three-dimensional gallium nitride structures with planar surfaces | Electricity | 29 | Active |
| US7804647B2 | Sub-resolutional laser annealing mask | Chemistry; Metallurgy | 28 | Active |
| US6777276B2 | System and method for optimized laser annealing smoothing mask | Electricity | 27 | Expired |
| US7419858B2 | Recessed-gate thin-film transistor with self-aligned lightly doped drain | Electricity | 25 | Active |
| US7319056B2 | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification | Electricity | 23 | Expired |
| US7220660B2 | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method | Emerging Cross-Sectional Technologies | 13 | Expired |
| US9755110B1 | Substrate with topological features for steering fluidic assembly LED disks | Electricity | 13 | Active |
| US9722145B2 | Light emitting device and fluidic manufacture thereof | Electricity | 13 | Active |
| US7872309B2 | Self-aligned lightly doped drain recessed-gate thin-film transistor | Electricity | 12 | Active |
| US9892944B2 | Diodes offering asymmetric stability during fluidic assembly | Electricity | 9 | Active |
| US7679028B2 | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification | Electricity | 7 | Active |
| US9252328B2 | Three-dimensional gallium nitride (GaN) pillar structure light emitting diode (LED) | Electricity | 7 | Active |
| US6733931B2 | Symmetrical mask system and method for laser irradiation | Emerging Cross-Sectional Technologies | 6 | Expired |
| US10334349B1 | Headphone-based language communication device | Electricity | 6 | Active |
| US10032957B2 | Substrate with topological features for steering fluidic assembly LED disks | Electricity | 6 | Active |
| US6660576B2 | Substrate and method for producing variable quality substrate material | Electricity | 5 | Expired |
| US6709910B1 | Method for reducing surface protrusions in the fabrication of lilac films | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.