Method for generating a swing curve and photoresist feature formed using swing curve
US6733936B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Oct 12, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/3028
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for generating a swing curve and a photoresist feature formed using the swing curve. A layer of photoresist is formed that has varying thickness. The thickness of the layer of photoresist is determined at a plurality of points. The semiconductor wafer is then exposed and developed to form a photoresist structure that includes features. For each of the points at which thickness was determined, the size of a corresponding feature is determined. A curve is then determined that correlates the thickness measurements and the size measurements. The resulting swing curve is then used to determine a thickness for photoresist deposition and a photoresist layer is deposited, exposed, and developed to obtain a photoresist feature having the desired size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.