Resist composition
US6733952B2 · kind B2 · utility
6Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Dec 12, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/108
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The following resist composition of chemical amplification type, which is excellent in transparency to light beams and dry etching properties and gives a resist pattern excellent in sensitivity, resolution, evenness, heat resistance, etc.A resist composition which comprises a fluoropolymer (A) comprising monomer units (a) of a fluorovinyl monomer having —CF2—OR (wherein R is a C1-10 alkyl group) and monomer units (b) of an alicyclic ethylenic monomer, an acid-generating compound (B) which generates an acid upon irradiation with light, and an organic solvent (C).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.