Semiconductor light emitting device and method of fabricating semiconductor light emitting device
US6734030B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Mar 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor light emitting devices and a method of fabricating the semiconductor light emitting devices are provided. The semiconductor light emitting device includes a growth substrate, a first growth layer formed on the growth substrate, a growth obstruction film formed on the first growth layer, and a second growth layer formed by selective growth from an opening portion formed in the growth obstruction film, wherein device isolation trenches for isolating devices from each other are formed in the first growth layer formed on the growth substrate, and the second growth layer is formed by selective growth after formation of the device isolation trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.