Anti-type dosage as LDD implant
US6734085B1 · kind B1 · utility
2Cited by
5References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Dec 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method is provided for turning off MOS transistors through an anti-code (type) LDD implant without the need for high energy implant that causes poly damage. The method also negates any deleterious effects due to the variations in the thickness of the poly gate. The anti-code LDD implant can be performed vertically, or at a tilt angle, or in a combination of vertical and tilt angle. The method can be made part of a Flash-ROM process that is applicable to both polycide and silicide processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.