Waveguide photodiode
US6734519B1 · kind B1 · utility
4Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2003 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Mar 17, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A waveguide photodiode includes an n-type cladding layer, an n-type light confining layer, an i-type light absorption layer, a p-type light confining layer, and a p-type cladding layer buried in an Fe—InP blocking layer on a semiconductor substrate. At least one of the p-type light confining layer and the p-type cladding layer contains a p-type impurity selected from Be, Mg, and C. An undoped layer is preferably located between the i-type light absorption layer and the p-type light confining layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.