Oxidation resistant microelectronics capacitor structure with L shaped isolation spacer
US6734526B1 · kind B1 · utility
4Cited by
13References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Oct 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/688
Abstract
A capacitor structure within a microelectronic product employs at least one of: (1) an oxidation barrier layer formed upon a second capacitor plate within the capacitor structure; and (2) a spacer formed adjoining a sidewall of the second capacitor plate, where the spacer is formed with an “L” shape. The foregoing features of the capacitor structure provide a capacitor formed therein with enhanced performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.