Chun-Yao Chen
28Patents
9h-index
51Co-inventors
78Inventor score
Filing activity: Sep 9, 1994 → Dec 27, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6720232B1 | Method of fabricating an embedded DRAM for metal-insulator-metal (MIM) capacitor structure | Electricity | 98 | Expired |
| US6136643A | Method for fabricating capacitor-over-bit-line dynamic random access memory (DRAM) using self-aligned contact etching technology | Electricity | 46 | Expired |
| US5994192A | Compensation of the channel region critical dimension, after polycide gate, lightly doped source and drain oxidation procedure | Electricity | 37 | Expired |
| US6883920B2 | Adjusting apparatus | Physics | 29 | Expired |
| US6833578B1 | Method and structure improving isolation between memory cell passing gate and capacitor | Electricity | 12 | Expired |
| USD483727S1 | Rear projection television | General | 12 | Expired |
| US6306759A | Method for forming self-aligned contact with liner | Electricity | 10 | Expired |
| US7282757B2 | MIM capacitor structure and method of manufacture | Electricity | 10 | Expired |
| US7271083B2 | One-transistor random access memory technology compatible with metal gate process | Electricity | 9 | Expired |
| US7115935B2 | Embedded DRAM for metal-insulator-metal (MIM) capacitor structure | Electricity | 9 | Expired |
| US6773115B2 | Adjusting apparatus for projection | Physics | 8 | Expired |
| USD508471S1 | Rear projection television | General | 7 | Expired |
| US6764967B2 | Method for forming low thermal budget sacrificial oxides | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5508630A | Probe having a power detector for use with microwave or millimeter wave device | Physics | 7 | Expired |
| US7268312B2 | Button protecting structure | Electricity | 6 | Expired |
| US8242551B2 | Metal-insulator-metal structure for system-on-chip technology | Electricity | 5 | Active |
| US7382012B2 | Reducing parasitic capacitance of MIM capacitor in integrated circuits by reducing effective dielectric constant of dielectric layer | Electricity | 4 | Expired |
| US6734526B1 | Oxidation resistant microelectronics capacitor structure with L shaped isolation spacer | Electricity | 4 | Expired |
| US8148223B2 | 1T MIM memory for embedded ram application in soc | Electricity | 3 | Active |
| US7148934B2 | Easy-maintain rear projection television | Electricity | 3 | Expired |
| US7884408B2 | One-transistor random access memory technology compatible with metal gate process | Electricity | 2 | Active |
| US8559545B2 | Channel information feedback method and apparatus thereof | Electricity | 2 | Active |
| US8987086B2 | MIM capacitor with lower electrode extending through a conductive layer to an STI | Electricity | 2 | Active |
| US9012967B2 | 1T MIM memory for embedded RAM application in soc | Electricity | 1 | Active |
| US9661889B1 | Head-mounted display device | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.