Electron-beam treated CDO films
US6734533B2 · kind B2 · utility
11Cited by
2References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 30, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | May 30, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an integrated circuit including forming a dielectric film is described. The forming of the dielectric film includes: providing a substrate, providing a carbon doped oxide film on the substrate, and treating the carbon doped oxide film with an electron beam. The carbon doped oxide film can be provided by chemical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.