Semiconductor device and method of manufacturing the same
US6734568B2 · kind B2 · utility
28Cited by
9References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Aug 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises an electrode formed above a substrate, an under bump metal (UBM) film on the electrode, the under bump metal film being in the shape of a recess, and a bump electrode embedded in the under bump metal film, the bump electrode having sides and bottom thereof surrounded by the under bump metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.