Semiconductor luminous elements and semiconductor laser
US6735230B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2001 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Mar 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
On the surface of a conductive substrate (1) of GaAs, Ge, Si, etc., a semiconductor lamination section including a light emitting layer forming portion (11) that has at least an n-type layer (4) and a p-type layer (6) made from a compound semiconductor of a Group III element and nitrogen and that is laminated so as to form a light emitting layer is formed through a buffer layer (2) suitable for the substrate. As a result, a semiconductor light emitting device using a Group III nitride compound semiconductor, which is of a vertical type that allows electrodes to be taken out from both of the upper and lower surfaces of a chip, has superior crystalline properties with high light emitting efficiency, and exhibits cleavage, is obtained. Therefore, it is possible to easily mount a LD chip on a sub-mount having a good thermal conductivity, and consequently to prevent a reduction and degradation in the light emitting efficiency (differential quantum efficiency) due to heat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.