Eliminate broken line damage of copper after CMP
US6736701B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2001 |
| Grant date | May 18, 2004 |
| Priority date | — |
| Expiry date | Sep 3, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B21/04
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A new method is provided for the post-deposition treatment of copper lines. A damascene copper line pattern whereby a TaN barrier layer and a seed layer have been provided is polished. Under the first embodiment of the invention, the deposited copper is polished (Cu CMP), the surface of the wafer is rinsed using a first High Flow DI rinse that contains a TBA inhibitor. The TaN CMP is performed immediately following the first High Flow DI rinse. A second High Flow DI rinse is applied using DI water that contains TBA inhibitor. The required following rinse step is executed immediately after the second High Flow DI rinse has been completed. Under the second embodiment of the invention, the process of CMP has been divided in two distinct steps where the first step is aimed at corrosion elimination and the second step is aimed at elimination of mechanical damage to the polished copper. The processing conditions for the second processing step have been extended and optimized, thereby using a second belt of a CMP apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.