Tsu Shih
59Patents
16h-index
53Co-inventors
79Inventor score
Filing activity: Feb 2, 1996 → Apr 24, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6020263A | Method of recovering alignment marks after chemical mechanical polishing of tungsten | Electricity | 272 | Expired |
| US6118185A | Segmented box-in-box for improving back end overlay measurement | Emerging Cross-Sectional Technologies | 55 | Expired |
| US6391780B1 | Method to prevent copper CMP dishing | Electricity | 46 | Expired |
| US6495452B1 | Method to reduce capacitance for copper interconnect structures | Electricity | 42 | Expired |
| US5654234A | Method for forming a void-free tungsten-plug contact in the presence of a contact opening overhang | Electricity | 33 | Expired |
| US5933744A | Alignment method for used in chemical mechanical polishing process | Emerging Cross-Sectional Technologies | 30 | Expired |
| US6398627B1 | Slurry dispenser having multiple adjustable nozzles | Performing Operations; Transporting | 28 | Expired |
| US6228760A | Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polish | Emerging Cross-Sectional Technologies | 24 | Expired |
| US6736701B1 | Eliminate broken line damage of copper after CMP | Performing Operations; Transporting | 23 | Expired |
| US6518166B1 | Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer | Electricity | 22 | Expired |
| US5923996A | Method to protect alignment mark in CMP process | Electricity | 20 | Expired |
| US6080656A | Method for forming a self-aligned copper structure with improved planarity | Electricity | 20 | Expired |
| US6429118B1 | Elimination of electrochemical deposition copper line damage for damascene processing | Electricity | 19 | Expired |
| US6227947A | Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer | Performing Operations; Transporting | 19 | Expired |
| US6383935B1 | Method of reducing dishing and erosion using a sacrificial layer | Electricity | 18 | Expired |
| US6443810B1 | Polishing platen equipped with guard ring for chemical mechanical polishing | Performing Operations; Transporting | 17 | Expired |
| US5709755A | Method for CMP cleaning improvement | Electricity | 16 | Expired |
| US6821896B1 | Method to eliminate via poison effect | Electricity | 16 | Expired |
| US5858854A | Method for forming high contrast alignment marks | Electricity | 16 | Expired |
| US6372632B1 | Method to eliminate dishing of copper interconnects by the use of a sacrificial oxide layer | Electricity | 15 | Expired |
| US5827782A | Multiple etch method for optimizing Inter-Metal Dielectric (IMD) spacer layer profile | Electricity | 13 | Expired |
| US6153526A | Method to remove residue in wolfram CMP | Electricity | 12 | Expired |
| US5972798A | Prevention of die loss to chemical mechanical polishing | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6458689B2 | Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polish | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6620725B1 | Reduction of Cu line damage by two-step CMP | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.