Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
US6737201B2 · kind B2 · utility
9Cited by
1References
15Claims
0Family size
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Key dates
| Filing date | Nov 16, 2001 |
| Grant date | May 18, 2004 |
| Priority date | — |
| Expiry date | Apr 15, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/24
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In a reflection type mask blank for EUV exposure with a substrate, a multilayer film is formed on the substrate so as to reflect an EUV light ray. A light absorber layer is formed on the multilayer film so as to absorb the EUV light ray. The multilayer film has flatness with respect to a surface thereof, and the flatness is 100 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.