Manufacturing of a thin film inorganic light emitting diode
US6737293B2 · kind B2 · utility
15Cited by
19References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 16, 2002 |
| Grant date | May 18, 2004 |
| Priority date | — |
| Expiry date | Jan 16, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T24/1494
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Nanoparticle dispersions of ZnS doped with a luminescent center are prepared by precipitation from aqueous solutions. When such dispersions are coated between conductive electrodes a Thin Film Inorganic Light Emitting Diode device is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.