Ferroelectric memory device and method of forming the same
US6737694B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2002 |
| Grant date | May 18, 2004 |
| Priority date | — |
| Expiry date | Jan 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory device along with a method of forming the same are provided. A first interlayer insulating layer is formed on a semiconductor substrate. A buried contact structure is formed on the first interlayer insulating layer. The buried contact structure is electrically connected to the substrate through a first contact hole extending through the first interlayer insulating layer. A blocking layer covers or encapsulates the buried contact structure and the first interlayer insulating layer. A second interlayer insulating layer is formed on the blocking layer. A ferroelectric capacitor formed on the second interlayer insulating layer and is electrically connected to the buried contact structure through a second contact hole that penetrates the second interlayer insulating layer and the blocking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.