Mechanical stress free processing method
US6739953B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2003 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Apr 9, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S451/908
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
According to one embodiment, a method of planarizing of a surface of a semiconductor substrate is provided. A copper layer is inlaid in a dielectric layer of the substrate. The semiconductor substrate is disposed opposite to a polishing pad and relative movement provided between the pad and the substrate. An electrolytic slurry containing abrasive particles is flowed over the substrate or the pad. A voltage is applied between the polishing pad and the substrate to perform electropolishing of the substrate. The rate of chemical mechanical polishing is controlled by the down force applied to a polishing head urging the substrate against the polishing pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.