Process for fabrication of a SIMOX substrate
US6740565B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2002 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Nov 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a process for fabrication of a SIMOX substrate wherein oxygen ions are implanted into a single crystal silicon substrate and then subjected to a high-temperature heat treatment to form a buried oxide layer and a surface single crystal silicon layer, wherein the single crystal silicon substrate used has a mean resistivity of 100 &OHgr;cm or greater, and there is conducted a step of maintaining a temperature of from 800° C. to 1250° C. for a predetermined time in the final stage of the high-temperature heat treatment, as well as a SIMOX substrate wherein the mean resistivity of the substrate obtained by the process is 100 &OHgr;cm or greater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.