Method of forming low-dielectric constant film on semiconductor substrate by plasma reaction using high-RF power
US6740602B1 · kind B1 · utility
50Cited by
4References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2003 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Mar 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a film having a low dielectric constant and high mechanical hardness on a semiconductor substrate by plasma reaction includes the steps of: (i) introducing a silicon-containing hydrocarbon gas as a source gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and (ii) applying radio-frequency (RF) power of 1,000 W or higher to the reaction space while maintaining a pressure of the reaction space at 100 Pa or higher to activate plasma polymerization reaction in the reaction space, thereby forming a thin film on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.