Field-effect transistor, circuit configuration and method of fabricating a field-effect transistor

US6740910B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfgang Roesner · Austin, US
• Richard Luyken · Munich, DE
• Johannes Kretz · Birkenfeld, DE

Key dates

• Filing date: Jan 28, 2003
• Grant date: May 25, 2004
• Expiry date: Jan 28, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/938
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

The gate region of a field effect transistor comprises at least one through hole wherein a nanoelement is provided which is electrically coupled to the source and the drain. The nanoelement may have the conductance thereof controlled by means of the gate, such that the nanoelement forms a channel region of the field effect transistor.