Vertical MOSFET with horizontally graded channel doping
US6740920B2 · kind B2 · utility
11Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2002 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Mar 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/63
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Body effects in vertical MOSFET transistors are considerably reduced and other device parameters are unaffected in a vertical transistor having a threshold implant with a peak at the gate and an implant concentration distribution that declines rapidly away from the gate to a plateau having a low p-well concentration value. A preferred embodiment employs two body implants—an angled implant having a peak at the gate that sets the Vt and a laterally uniform low dose implant that sets the well dopant concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.