Semiconductor integrated circuit device and the method of producing the same
US6740924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2002 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Dec 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The bit lines composed of a conductive film containing the tungsten as a principal component are formed inside the side wall spacers formed on the side walls of the wiring grooves. The TiN film having a higher adhesive strength to the silicon oxide than the tungsten is formed on the boundary faces between the bit lines and the side wall spacers, which functions as an adhesive layer that prevents strippings on the boundary faces between the bit lines and the side wall spacers. Thereby, the invention prevents disconnections, even when the width of the wirings having the tungsten as the principal component is fined to 0.1 &mgr;m or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.