Light emission apparatus and method of fabricating the same
US6741029B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 28, 2002 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Mar 28, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24983
Abstract
A light emission apparatus includes: an electrode; a LED mounted on the electrode with an indium layer interposed therebetween, the LED having a substrate formed of an n-type ZnSe single crystal, and an epitaxial light emission structure formed of a compound crystal comprising ZnSe serving as a matrix, the epitaxial light emission structure being provided on the substrate and emitting light when an electric current is introduced thereinto; and resin encapsulating the LED, the resin having a glass transition temperature of lower than 80 degrees centigrade or being soft to be still elastic in a vicinity of the LED at room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.