Method for relating photolithography overlay target damage and chemical mechanical planarization (CMP) fault detection to CMP tool indentification
US6741903B1 · kind B1 · utility
14Cited by
11References
36Claims
0Family size
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Key dates
| Filing date | Jun 1, 2000 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Aug 1, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A method is provided, the method comprising processing a workpiece, having a photolithography overlay target structure disposed thereon, using a chemical-mechanical planarization (CMP) tool and measuring a photolithography overlay parameter using the photolithography overlay target structure. The method also comprises forming an output signal corresponding to the photolithography overlay parameter measured and to the chemical-mechanical planarization (CMP) tool used and using the output signal to improve at least one of accuracy in photolithography overlay metrology and fault detection in chemical-mechanical planarization (CMP).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.