Process for producing aluminum oxide films at low temperatures
US6743475B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2001 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Oct 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/873
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for producing aluminum oxide thin films on a substrate by the ALD method comprises the steps of bonding a vaporizable aluminum compound to a growth substrate, and converting the bonded organoaluminum compound to aluminum oxide. The bonded aluminum compound is converted to aluminum oxide by contacting it with a reactive vapor source of oxygen other than water, and the substrate is kept at a temperature of less than 190° C. during the growth process. By means of the invention it is possible to produce films of good quality at low temperatures. The dielectric thin films having a dense structure can be used for passivating surfaces that do not endure high temperatures. Such surfaces include, for example, polymer films such as organic electroluminescent displays. Further, when a water-free oxygen source is used, surfaces that are sensitive to water can be passivated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.