Method for making an integrated circuit device including photodiodes
US6743652B2 · kind B2 · utility
16Cited by
10References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 1, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Feb 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
Fast and efficient photodiodes with different structures are fabricated using CMOS process technology by adapting transistor structures to form the diode structures. The anode regions of the photodiodes correspond to either PLDD regions of PMOS transistors or P-wells of NMOS transistors to provide two different photodiode structures with different anode region depths and thus different drift region thicknesses. An antireflective film used on the silicon surface of the photodiodes is employed as a silicide-blocking mask at other locations of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.