Method of reducing leakage using Si3N4 or SiON block dielectric films
US6743669B1 · kind B1 · utility
17Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Jun 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric film block is used in semiconductor processing to protect selected areas of the wafer from silicidation. The selected areas may include resistors. A first layer of oxide is formed on the resistor and a second layer comprising SiON or Si3N4 is disposed on the oxide. A mask is patterned to allow etching to take place in the areas where silicide formation is desired. The oxide layer serves as an etch stop layer during etching of the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.