Method for the formation of active area utilizing reverse trench isolation
US6743701B1 · kind B1 · utility
0Cited by
9References
15Claims
0Family size
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Key dates
| Filing date | Dec 20, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Dec 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76237
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an active area in a substrate includes the steps of growing an isolation oxide on a silicon substrate, providing a photresist mask to define the active areas on the substrate, performing etching and stripping processes, removing the residual oxide from the active areas and selectively growing an epitaxial silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.