Semiconductor integrated circuit including insulated gate field effect transistor and method of manufacturing the same
US6744104B1 · kind B1 · utility
18Cited by
14References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1999 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Nov 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate electrode of an n-channel IGFET includes a first region composed of at least a first IV group element and a second IV group element which are different from each other, and a second region composed of the first IV group element. Similarly, a gate electrode of a p-channel IGFET includes first and second regions. For example, the first region is made of SiGe while the second region is made of Si. In both of the n-channel and P-channel IGFET, silicide electrodes are formed on the gate electrodes 4N and 4P through silicidation of at least parts of the second regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.