High frequency semiconductor device and method of manufacture
US6744117B2 · kind B2 · utility
15Cited by
10References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Apr 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device (10) having a gate (15), a source (19), and a drain (20) with a gate bus (25) and first ground shield (24) patterned from a first metal layer and a second ground shield (31) patterned from a second metal layer. The first ground shield (24) and the second ground shield (31) lower the capacitance of device (10) making it suitable for high frequency applications and housing in a plastic package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.