Thin film LED
US6744196B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 11, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Dec 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a tinted thin film layer over the LED chip that changes the color of the emitted light. For example, a blue-light emitting LED chip can be used to produce white light. The tinted thin film layer beneficially consists of ZnSe, CeO2, Al2O3, or Y2O3:Ce that is deposited using a chemical vapor deposition process, such as metal organic chemical vapor deposition (MOCVD), atomic layer chemical vapor deposition (ALD), plasma enhanced MOCVD, plasma enhanced ALD, and/or photo enhanced CVD. Suitable CVD precursors include Alkoxide, &bgr;-dikeonate, Metalloscene, Alkys, DMZn, DEZe, H2Se, DMSe, TbuSe, and DESe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.