Method and system for making TMR junctions
US6744608B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Aug 8, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a tunneling magnetoresistive sensor is disclosed. The method and system include providing a pinned layer, a free layer and an insulating layer between the pinned and free layers. The pinned and free layers are ferromagnetic. The method and system also include providing a hard mask layer to be used in defining the sensor at the top of the tunneling magnetoresistive sensor. The method and system also include using the hard mask layer to define the tunneling magnetoresistive sensor. Thus, the pinned layer, the free layer and the insulating layer are capable of having a minimum dimension of less than 0.2 &mgr;m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.